Ferroelectric semiconductor junctions based on graphene/In<sub>2</sub>Se<sub>3</sub>/graphene van der Waals heterostructures
نویسندگان
چکیده
Abstract The miniaturization of ferroelectric devices offers prospects for non-volatile memories, low-power electrical switches and emerging technologies beyond existing Si-based integrated circuits. An class ferroelectrics is based on van der Waals (vdW) two-dimensional materials with potential nano-ferroelectrics. Here, we report semiconductor junctions (FSJs) in which the vdW ? -In 2 Se 3 embedded between two single-layer graphene electrodes. In these two-terminal devices, polarization nanometre-thick layer modulates transmission electrons across graphene/In interface, leading to memristive effects that are controlled by applied voltages and/or light. underlying mechanisms conduction examined over a range temperatures under light excitation revealing thermionic injection, tunnelling trap-assisted transport. These findings relevant future developments FSJs whose geometry well suited electronics, offering opportunities expand functionalities design heterostructure.
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ژورنال
عنوان ژورنال: 2D materials
سال: 2021
ISSN: ['2053-1583']
DOI: https://doi.org/10.1088/2053-1583/ac1ada